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Ambipolar organic field-effect transistor using gate insulator hysteresis
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10.1063/1.1899773
/content/aip/journal/apl/86/14/10.1063/1.1899773
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1899773
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

curve of cyanoethylpullulan. Hysteresis appears at or less. At or more, the curve becomes linear, indicating paradielectricity. The coercive electric field is and the spontaneous polarization is .

Image of FIG. 2.
FIG. 2.

Device structure of the organic field-effect transistor. Cyanoethylpullulan and copper phthalocyanine thicknesses are and of , respectively. The width and length of the source-drain channel is and , respectively.

Image of FIG. 3.
FIG. 3.

Property of the organic field-effect transistor following poling at . (a) Source-drain current vs source-drain voltage of the type (accumulation) and (b) vs of the type (inversion).

Image of FIG. 4.
FIG. 4.

Temperature dependence of the -type field-effect mobility.

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/content/aip/journal/apl/86/14/10.1063/1.1899773
2005-04-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ambipolar organic field-effect transistor using gate insulator hysteresis
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/14/10.1063/1.1899773
10.1063/1.1899773
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