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(a) EL spectra of the ITO––Si structures with -containing Si nanoclusters and Er; and (b) PL and EL intensity at 1535 nm wavelength and PL intensity at 707 nm wavelength in dependence on excess Si content.
Injected current density divided by the square of the electric field vs the reciprocal electric field in the ITO–Si-rich :Er–Si metal-oxide-semiconductor (MOS) structure with different excess Si concentrations.
Net trapped charge calculated from the change in voltage applied to the ITO––Si structure in a constant current regime as a function of injection charge from the Si substrate, for Er- and Si-implanted . Inset: Charge on the traps with capture cross section of more than as a function of excess Si content.
EL intensity vs current density for an ITO–Si-rich :Er–Si MOS structure for different concentrations of the excess Si atoms. Inset: The as a function of excess Si content calculated from the data presented in Fig. 4 using the expression , where the is the overall lifetime of the Er, and is the excitation cross section of the Er centers.
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