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Nd-doped films prepared by pulsed-laser deposition on substrate
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10.1063/1.1898439
/content/aip/journal/apl/86/15/10.1063/1.1898439
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/15/10.1063/1.1898439
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction pattern of the film deposited by the PLD technique. The asterisk indicates the diffraction peak of impurity phase.

Image of FIG. 2.
FIG. 2.

PL spectra with a 3 W, 808 nm excitation source: (a) bulk material, (b) film. Experimental setup is schematically shown in the inset: (1) laser diode; (2) film sample; (3) focusing lens; (4) optical spectrum analyzer.

Image of FIG. 3.
FIG. 3.

PL intensity at 1065.0 and 1342.5 nm emissions as a function of the input power.

Image of FIG. 4.
FIG. 4.

Guided-mode spectra by measuring the reflected intensity versus the external angle of incidence. (a) TE mode, (b) TM mode.

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/content/aip/journal/apl/86/15/10.1063/1.1898439
2005-04-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nd-doped GdVO4 films prepared by pulsed-laser deposition on SiO2∕Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/15/10.1063/1.1898439
10.1063/1.1898439
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