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Shallow implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F
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10.1063/1.1900305
/content/aip/journal/apl/86/15/10.1063/1.1900305
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/15/10.1063/1.1900305
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Figures

Image of FIG. 1.
FIG. 1.

MEIS energy spectra of Xe bombardment preamorphized Si samples, implanted with 1 and 3 keV before and after annealing at 1025 °C for 10 s. The inset shows the depth Xe depth profiles before and after annealing.

Image of FIG. 2.
FIG. 2.

SIMS F depth profiles for Xe bombardment for non- and pre-amorphized samples implanted with 3 keV and 1 keV , before and after annealing at 1025 °C for 10 s. The post-annealing MEIS Xe profile for the PAI 3 keV implant is also shown.

Image of FIG. 3.
FIG. 3.

EFTEM images of a Xe PAI, 3 keV implanted Si sample after annealing to 1025 °C for 10 s using electrons with an energy loss corresponding to (a) the M ionisation edge and (b) from the N ionisation edge of Xe.

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/content/aip/journal/apl/86/15/10.1063/1.1900305
2005-04-05
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Shallow BF2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/15/10.1063/1.1900305
10.1063/1.1900305
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