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Nucleation and growth of platelets in hydrogen-ion-implanted silicon
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View: Figures


Image of FIG. 1.
FIG. 1.

Experimental data from hydrogen as-implanted (100) silicon. The solid curve is the ion implantation damage distribution, obtained from ion channelling data. The dashed curve is the out-of-plane strain distribution , as measured by double crystal x-ray diffraction, and the dotted curve is the implanted hydrogen distribution, measured by elastic recoil detection. Also presented is a histogram showing the distribution of (100) platelets, which was obtained from an analysis of the TEM data shown in Fig. 2.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM micrographs from implanted and annealed Si. Platelets are not observed in silicon implanted with hydrogen at liquid nitrogen temperatures but are present in both (100) and (111) silicon after annealing. For both substrates, the predominant platelet orientation is parallel to the substrate surface and perpendicular to the out-of-plane strain direction and the projected range of the implanted hydrogen.

Image of FIG. 3.
FIG. 3.

Schematic representation of the biaxial in-plane stress state in the hydrogen ion implanted Si substrates (a) and the influence of this applied stress, through the term— (Eq. (3)), on the nucleation and growth of hydrogen platelets with different orientations (b) – (d). For or negative and the platelet surface normal to the or direction will be positive and there will be an additional barrier to any platelet not nucleating in the plane of stress (b). When the stress and Burgers vector are orthogonal, there will be no effect on platelets nucleating with their surface normal to the direction (c). The or stress acting on {111} platelets not parallel to the surface in (111) hydrogen ion implanted Si also adds an additional barrier to platelet nucleation. Once nucleated, Eq. (3) will favor or disfavor platelet growth in the same way that it affects platelet nucleation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nucleation and growth of platelets in hydrogen-ion-implanted silicon