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Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM images of nanowires patterned along two different crystallographic directions: (a) [110] and (b) [010].

Image of FIG. 2.
FIG. 2.

(a) Magnetization vs temperature for macroscopic pieces (area of ) of as-grown and annealed heterostructure. The data are measured in a magnetic field of 50 Oe in-plane upon warming after field cooling at 10 kOe. The sample is annealed at 190 °C in ultrahigh purity nitrogen gas (5N) for 5 h. The data show that is not affected by annealing. (b) Resistance vs temperature (measured in van der Pauw geometry) for a mesa patterned from the same wafer as in (a).

Image of FIG. 3.
FIG. 3.

Temperature dependence of the (four-probe) resistivity for as-grown and annealed single wires of (a) width and (b) 70 nm width. Both sets of wires are patterned along the [110] direction. Note that the data for the annealed 70 nm wire in (b) are plotted using a different scale (axis on right hand side). Plot (c) shows the same measurements for four individual 70 nm wires patterned along different crystalline orientations. All wires are patterned from the same wafer used in Fig. 2, and the annealing conditions are identical to those used in Fig. 2.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures