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Thermoelectric properties of InSb and thin films grown by metalorganic vapor-phase epitaxy
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10.1063/1.1901813
/content/aip/journal/apl/86/15/10.1063/1.1901813
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/15/10.1063/1.1901813
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of electrical resistivity (closed circles) and Seebeck coefficient (open circles) of InSb thin film grown on sapphire substrate.

Image of FIG. 2.
FIG. 2.

Temperature dependence of electrical resisitivity (closed circles) and Seebeck coefficient (open circles) of InSb thin film grown on glass substrate.

Image of FIG. 3.
FIG. 3.

Temperature dependences of power factors of InSb thin films grown on sapphire (open circles) and glass (closed circles) substrates.

Image of FIG. 4.
FIG. 4.

Temperature dependence of electrical resistivity (closed circles) and Seebeck coefficient (open circles) of thin film grown on sapphire substrate.

Image of FIG. 5.
FIG. 5.

Temperature dependence of electrical resistivity (closed circles) and Seebeck coefficient (open circles) of thin film grown on glass substrate.

Image of FIG. 6.
FIG. 6.

Temperature dependences of power factors of thin films grown on sapphire (open circles) and glass (closed circles) substrates.

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/content/aip/journal/apl/86/15/10.1063/1.1901813
2005-04-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermoelectric properties of InSb and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/15/10.1063/1.1901813
10.1063/1.1901813
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