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Near-field and far-field dynamics of (Al,In)GaN laser diodes
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View: Figures


Image of FIG. 1.
FIG. 1.

Integrated intensity of the laser pulse as function of time. The arrows mark the times of the respective frames in Figs. 2 and 3. The onset of the 500 ns long electrical driving pulse is at .

Image of FIG. 2.
FIG. 2.

(Color) (a)-(c) measured evolution of the intensity from near-field to far-field at three different times (a) , (b) , and (c) . The lateral plane of the LD epitaxial layers corresponds to , propagation direction to . Intensity is plotted on a linear false color scale with black corresponding to zero and red to maximum intensity. Because of diffraction in transverse direction the intensity decreases with increasing distance to the laser facet. For each distance the intensity is scaled to a constant integrated intensity. (d)–(f) reconstructed intensity distributions corresponding to (a)–(c), respectively.

Image of FIG. 3.
FIG. 3.

Measured intensity (short dashed curves), reconstructed intensity (long dashed curves), and reconstructed phase (solid curves) at six different times , and for (a)–(f), respectively. For clarity the intensity distributions for propagation distances are shifted vertically and are scaled to equal integrated intensity.

Image of FIG. 4.
FIG. 4.

(Color) Near-field to far-field evolution of the intensity for LDs with (a) and (b) ridge width; (c) and (d) show the corresponding near-field intensity (short dashed curve) and reconstructed phase distribution (solid curve).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near-field and far-field dynamics of (Al,In)GaN laser diodes