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Electron spin interferometry using a semiconductor ring structure
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10.1063/1.1906301
/content/aip/journal/apl/86/16/10.1063/1.1906301
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/16/10.1063/1.1906301
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Device schematic. Dark areas are contacts and light gray area is the GaAs spin interferometer. (b) Schematic of experimental geometry. (c) Faraday rotation as a function of at and an applied voltage of 3.5 V. (d) Faraday rotation as a function of at and an applied voltage of 3.5 V.

Image of FIG. 2.
FIG. 2.

(a) Series of time-resolved Faraday rotation data as a function of lab time with an applied voltage of 3.5 V at and . (b) Amplitude of the spin precession signal obtained from fits to data in (a), normalized to the value at . (c) Amplitude of the expected spin precession signal from the simulation. (d) Phase of the spin precession signal from fits to data (filled circles) and exponentially decaying background (line). (e) The data in (d) with the background subtracted. (f) Phase of the expected spin precession signal from the simulation.

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/content/aip/journal/apl/86/16/10.1063/1.1906301
2005-04-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron spin interferometry using a semiconductor ring structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/16/10.1063/1.1906301
10.1063/1.1906301
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