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Conduction-band profile of two consecutive active sections and moduli squared of the wave functions. The layer thicknesses (in nm) for one active section starting at the left-most barrier are: . The layers in bold are Si-doped to .
Pulsed light output-current characteristics of a long and wide device at various heat-sink temperatures. The inset shows the temperature dependence of the threshold current density of the laser.
Pulsed light output-current density characteristics of a long and wide device at heat–sink temperatures in the range of . (Power scaling is equal to that in Fig. 2).
Emission spectra at various heat-sink temperatures of a long and wide device.
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