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Schematic representations of the various possible heterointerfaces in the (100) and (110) orientations, assuming atomically abrupt interfaces. (a) The (100) interface. (b) The (100) interface. (c) The (110) heterointerface. (d) An atomic model of the (110) surface at a unit-cell step.
AFM images of the (110) surface annealed in air at 900 °C for 6 h (a), and 1100°C for 12 h (b). Arrows show accumulation of surface segregated SrO, and the circles show areas exhibiting step bunching.
AFM images of the (110) surface annealed at 1000 °C for 1 h in a of (a), (b), and (c). (d) The vertical profile averaged over the rectangle denoted in panel (c). (e) The temperature dependent sheet resistance for substrates annealed at 1000 °C for 1 h at various . (f) AFM image of the (110) surface after annealing at 1000 °C for 1 h in a of , followed by annealing at 550 °C for 30 min in a of (filling the induced oxygen vacancies).
RHEED intensity oscillations for (110) growth after two stage anneal of the surface as in Fig. 3(f). The homoepitaxial film was grown at 580 °C in a of , and the heteroepitaxial film was grown at 600 °C in a of .
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