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Room temperature PL spectra of InAsSb QDs at different flow ratios (from 0.8 to 0.003).
Raman spectra at 80 K of InAsSb self-assembled QDs at different flow ratios.
80 K PL transients measured at InAsSb QD emission energy of . The transients are normalized and vertically shifted with respect to each other.
Photoluminescence rise and decay times for QD samples prepared under different growth conditions at average excitation density.
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