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Study of extended-defect formation in Ge and Si after H ion implantation
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10.1063/1.1906319
/content/aip/journal/apl/86/18/10.1063/1.1906319
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/18/10.1063/1.1906319
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XTEM micrograph of Si after H implantation with dose and annealing at 350 °C. (100) and {111} platelets are marked with arrows.

Image of FIG. 2.
FIG. 2.

XTEM micrograph of Ge after H implantation with dose and annealing at 280 °C.

Image of FIG. 3.
FIG. 3.

(a) XTEM micrograph of Si sample in a direction. “Vertical” {100} platelets are marked with arrows and strain contrast without observable platelets with circle; (b) plan-view TEM of Ge sample showing “vertical” {100} platelets.

Image of FIG. 4.
FIG. 4.

High-resolution TEM micrograph of a {311} defect in Ge.

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/content/aip/journal/apl/86/18/10.1063/1.1906319
2005-04-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of extended-defect formation in Ge and Si after H ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/18/10.1063/1.1906319
10.1063/1.1906319
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