Full text loading...
Schematic of the device structure. A single QD within the cavity is isolated with an aperture in the metallic contact.
(a) Measured and (b) modeled reflectivity of a planar section of the wafer (without an Al layer) at normal incidence from above the structure. (c) Measured and (d) modeled reflectivity of the section with Al still in place recorded through the substrate. A dotted line on each plot marks the cavity mode at .
(a) Photoluminescence from the device with laser pulses at under a bias of . (b) Photoluminescence power dependence and emission lines. From the saturation level of the line intensity we can infer a collection efficiency of . (c) Electroluminescence from the sample at a dc bias of . The inset (d) shows the power dependence of the electroluminescence as a function of the current through the device.
Autocorrelations recorded from (a)–(e) and (f)–(j) emission lines under dc electrical injection. The solid lines are fitted using a three-level rate equation model, known state lifetimes, system time-resolution and the measured background level. (k) and (l) Autocorrelation data recorded under pulsed electrical injection at repetition rate of from the and states, respectively.
Article metrics loading...