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Determination of the polarization discontinuity at the interface by electroreflectance spectroscopy
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10.1063/1.1923748
/content/aip/journal/apl/86/18/10.1063/1.1923748
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/18/10.1063/1.1923748
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

ER spectra of an HEMT structure in the spectral region of the AlGaN band gap (a) at and (b) at various voltages from .

Image of FIG. 2.
FIG. 2.

ER spectra near the GaN band gap at , , and .

Image of FIG. 3.
FIG. 3.

Electric field in the AlGaN barrier as obtained from the FK oscillations (solid circles). The solid line represents simulated data from a self-consistent conduction-band calculation. The inset shows the conduction-band edge near the surface at the threshold voltage (flat bands in the GaN layer).

Image of FIG. 4.
FIG. 4.

2DEG densities determined from the FK oscillations (solid circles) and from SdH experiments (triangles). Also shown are self-consistent conduction-band calculations using the experimentally determined polarization discontinuity (solid line) and the larger theoretical value (dashed line).

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/content/aip/journal/apl/86/18/10.1063/1.1923748
2005-04-29
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of the polarization discontinuity at the AlGaN∕GaN interface by electroreflectance spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/18/10.1063/1.1923748
10.1063/1.1923748
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