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ER spectra of an HEMT structure in the spectral region of the AlGaN band gap (a) at and (b) at various voltages from .
ER spectra near the GaN band gap at , , and .
Electric field in the AlGaN barrier as obtained from the FK oscillations (solid circles). The solid line represents simulated data from a self-consistent conduction-band calculation. The inset shows the conduction-band edge near the surface at the threshold voltage (flat bands in the GaN layer).
2DEG densities determined from the FK oscillations (solid circles) and from SdH experiments (triangles). Also shown are self-consistent conduction-band calculations using the experimentally determined polarization discontinuity (solid line) and the larger theoretical value (dashed line).
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