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Carrier-density-dependent electron effective mass in for
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10.1063/1.1924867
/content/aip/journal/apl/86/18/10.1063/1.1924867
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/18/10.1063/1.1924867

Figures

Image of FIG. 1.
FIG. 1.

Room temperature infrared reflectivity measurement (solid line) and theoretical fit (dashed line) of a :Cl sample with free-electron concentration of , resulting in an optical electron effective mass of . The inset shows ZnSe-, MnSe-, and GaAs-like phonons at 203, 228, and , respectively.

Image of FIG. 2.
FIG. 2.

Optical electron effective mass as a function of free-electron concentration for -type ZnSe:Cl samples. Open circles are the calculated values obtained from Kane’s two band model.

Image of FIG. 3.
FIG. 3.

Optical electron effective mass as a function of free-electron concentration in -type :Cl epilayers. The error bars in the determination of Mn content and are estimated to be about ±1% and ±9%, respectively. The open circles are theoretical values obtained under the assumption that the two-band Kane model can be used to roughly estimate the electron effective mass in ZnMnSe alloys.

Image of FIG. 4.
FIG. 4.

Optical mobility and resistivity as a function of free-electron concentration for -type ZnSe:Cl samples extracted from theoretical fits to the room temperature infrared reflectivity data.

Tables

Generic image for table
Table I.

Conduction band-edge masses for ZnSe and .

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/content/aip/journal/apl/86/18/10.1063/1.1924867
2005-04-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier-density-dependent electron effective mass in Zn1−xMnxSe for 0⩽x⩽0.13
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/18/10.1063/1.1924867
10.1063/1.1924867
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