1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Role of phonon scattering in carbon nanotube field-effect transistors
Rent:
Rent this article for
USD
10.1063/1.1923183
/content/aip/journal/apl/86/19/10.1063/1.1923183
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/19/10.1063/1.1923183
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scattering rate vs carrier kinetic energy in the lowest subband.

Image of FIG. 2.
FIG. 2.

Scattering in CNT MOSFETs: (a) A coaxially gated CNTFET with doped source/drain. The tube diameter is with a band gap . The total tube length is , with an intrinsic channel of , and a doped source/drain of . The gate oxide thickness is , and the dielectric constant is . (b) The simulated vs at for five cases: (i) solid: Ballistic transport, (ii) crosses: OP scattering only, with and , (iii) dashed: Elastic scattering only, with and , (iv) Circles: elastic and OP scattering with and , and (v) dash-dot: Strong elastic scattering with and .

Image of FIG. 3.
FIG. 3.

Optical phonon scattering in CNTFETs: (a) A snapshot of the electron distribution at the steady state for with and . The solid line shows the first subband edge. (b) A sketch for OP scattering at a large gate overdrive. at the top of the barrier, , is also shown. and are the source and drain Fermi levels, respectively.

Image of FIG. 4.
FIG. 4.

Scattering in CNT SBFETs: (a) vs at for ballistic transport (solid line), and in the presence of both elastic and OP scattering with and (dashed line with circles). The inset shows the simulated CNTFET with metal source/drain. The SB height for electrons is , the intrinsic channel length is , and the tube diameter is with . The gate oxide thickness is with a dielectric constant of . (b) A snapshot of the electron distribution at the steady state for with OP and elastic scattering.

Loading

Article metrics loading...

/content/aip/journal/apl/86/19/10.1063/1.1923183
2005-05-02
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of phonon scattering in carbon nanotube field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/19/10.1063/1.1923183
10.1063/1.1923183
SEARCH_EXPAND_ITEM