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Scattering rate vs carrier kinetic energy in the lowest subband.
Scattering in CNT MOSFETs: (a) A coaxially gated CNTFET with doped source/drain. The tube diameter is with a band gap . The total tube length is , with an intrinsic channel of , and a doped source/drain of . The gate oxide thickness is , and the dielectric constant is . (b) The simulated vs at for five cases: (i) solid: Ballistic transport, (ii) crosses: OP scattering only, with and , (iii) dashed: Elastic scattering only, with and , (iv) Circles: elastic and OP scattering with and , and (v) dash-dot: Strong elastic scattering with and .
Optical phonon scattering in CNTFETs: (a) A snapshot of the electron distribution at the steady state for with and . The solid line shows the first subband edge. (b) A sketch for OP scattering at a large gate overdrive. at the top of the barrier, , is also shown. and are the source and drain Fermi levels, respectively.
Scattering in CNT SBFETs: (a) vs at for ballistic transport (solid line), and in the presence of both elastic and OP scattering with and (dashed line with circles). The inset shows the simulated CNTFET with metal source/drain. The SB height for electrons is , the intrinsic channel length is , and the tube diameter is with . The gate oxide thickness is with a dielectric constant of . (b) A snapshot of the electron distribution at the steady state for with OP and elastic scattering.
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