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Isochronal annealing of phosphorus in Si for ET-PLAD and RT-PLAD. Dramatic reduction of occurred in the temperature range of . Inset shows variation as a function of annealing time for two postannealing temperatures after ET-PLAD.
Raman spectra of Si samples treated by various conditions. Postannealing (PA): low temperature.
SIMS depth profiles of phosphorus before annealing, after annealing, and the RTA. After annealing, further diffusion of the dopant was not observed.
junction characteristics before and after postannealing. After postannealing, the forward bias current was increased and the reverse bias current was reduced.
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