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Effects of low-temperature postannealing on a shallow junction fabricated by plasma doping
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10.1063/1.1923758
/content/aip/journal/apl/86/19/10.1063/1.1923758
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/19/10.1063/1.1923758
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Isochronal annealing of phosphorus in Si for ET-PLAD and RT-PLAD. Dramatic reduction of occurred in the temperature range of . Inset shows variation as a function of annealing time for two postannealing temperatures after ET-PLAD.

Image of FIG. 2.
FIG. 2.

Raman spectra of Si samples treated by various conditions. Postannealing (PA): low temperature.

Image of FIG. 3.
FIG. 3.

SIMS depth profiles of phosphorus before annealing, after annealing, and the RTA. After annealing, further diffusion of the dopant was not observed.

Image of FIG. 4.
FIG. 4.

junction characteristics before and after postannealing. After postannealing, the forward bias current was increased and the reverse bias current was reduced.

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/content/aip/journal/apl/86/19/10.1063/1.1923758
2005-05-03
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of low-temperature postannealing on a n+-p shallow junction fabricated by plasma doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/19/10.1063/1.1923758
10.1063/1.1923758
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