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Diffraction element assisted lithography: Pattern control for photonic crystal fabrication
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10.1063/1.1924894
/content/aip/journal/apl/86/19/10.1063/1.1924894
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/19/10.1063/1.1924894
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) SEM image of a portion of the triangular diffraction mask used to produce two-dimensional hexagonal array microstructures. The width of each of the 1000 slits making up the mask is 0.3 μm, and the pitch of each grating is 2 μm.

Image of FIG. 2.
FIG. 2.

(Color online) Schematic of the experimental arrangement used to create DEAL patterns.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Intensity distribution calculated for a DEAL pattern arising from the diffractive element shown in Fig. 1 placed at a distance of from the photoresist. The normalized color bar indicates regions of lowest light intensity (0) to highest light intensity (1.0). The distance markers are in micron units. In this case the phases of all the interfering beams are equal resulting in a periodic array of bumps, (b) AFM image of the resultant DEAL pattern formed in a SU-8 photoresist, and (c) SEM image of the resultant DEAL pattern formed in a SU-8 photoresist.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Intensity distribution calculated for a DEAL pattern arising from the diffractive element shown in Fig. 1 placed at a distance of from the photoresist. The normalized color bar indicates regions of lowest light intensity (0) to highest light intensity (1.0). The distance markers are in micron units. In this case one of the interfering beams is out of phase with the other two, resulting in a periodic array of air holes, (b) AFM image of the resultant DEAL pattern formed in a SU-8 photoresist, and (c) SEM image of the resultant DEAL pattern formed in a SU-8 photoresist.

Image of FIG. 5.
FIG. 5.

(Color online) (a) SEM image of a portion of the square array diffraction mask used to produce 2D square array microstructures. (b) Intensity distribution calculated for a two-dimensional square array mask having a period of 4 μm. The normalized color bar indicates regions of lowest light intensity (0) to highest light intensity (1.0). The distance markers are in micron units, (c) SEM image of the resultant formed in a SU-8 photoresist. The photoresist was placed from the diffraction element, which corresponds to a distance where the diffracted wavelets are in phase.

Image of FIG. 6.
FIG. 6.

(Color online) (a) AFM image of an etched Cr film using the DEAL patterned mask shown in Fig. 2, (b) AFM image of an etched Cr film using the DEAL patterned mask shown in Fig. 3. Bright areas correspond to the Cr regions.

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/content/aip/journal/apl/86/19/10.1063/1.1924894
2005-05-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diffraction element assisted lithography: Pattern control for photonic crystal fabrication
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/19/10.1063/1.1924894
10.1063/1.1924894
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