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(Color online) (a) SEM image of two-probe GaN NW device with contacts patterned by FIB-Pt deposition. The scale bar is . (b) I-beam image (-contrast) revealing Pt spreading around the FIB-Pt leads (white scale bar: ). Inset shows details of FIB Pt-contact: The NW is wide, and the width of the contact line is (scale bar: ).
(Color online) (a) Two-probe data from FIB-Pt contacted GaN NW. and denote diameter of NW and resistivity calculated from zero-bias resistance. Nominal Pt thickness for wire diameters 64, . The smallest diameter NW shows linear behavior in the bias window , while the larger diameter NWs display nonlinear . The NW is ∼ four times longer than the other two, thus the smaller current at all V. (b) Nonlinear behavior of another small-diameter NW with sputtered Pt contacts defined by e-beam lithography (inset). The resistivity is times greater than a wire from the same batch with FIB-Pt.
(Color online) (a) FIB patterned template before GaN growth. From left to right, FIB milled holes, Pt dots and lines. Depth of hole is , and thickness of dots and lines are . Separation between features is (scale bar: ). (b) The template in (a) after NW growth. NWs preferentially grew at the patterned Pt dots and lines, while milled holes did not nucleate NW growth (scale bar: ). (c) Individual GaN NWs grown at FIB-Pt dots (scale bar: ). Diameters of dots reduced to with same spacing. Inset shows a magnified image of spherical particle on the tip of grown NW. The diameters of NW and the particle are and , respectively.
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