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Focused-ion-beam platinum nanopatterning for GaN nanowires: Ohmic contacts and patterned growth
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10.1063/1.1925775
/content/aip/journal/apl/86/19/10.1063/1.1925775
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/19/10.1063/1.1925775
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) SEM image of two-probe GaN NW device with contacts patterned by FIB-Pt deposition. The scale bar is . (b) I-beam image (-contrast) revealing Pt spreading around the FIB-Pt leads (white scale bar: ). Inset shows details of FIB Pt-contact: The NW is wide, and the width of the contact line is (scale bar: ).

Image of FIG. 2.
FIG. 2.

(Color online) (a) Two-probe data from FIB-Pt contacted GaN NW. and denote diameter of NW and resistivity calculated from zero-bias resistance. Nominal Pt thickness for wire diameters 64, . The smallest diameter NW shows linear behavior in the bias window , while the larger diameter NWs display nonlinear . The NW is ∼ four times longer than the other two, thus the smaller current at all V. (b) Nonlinear behavior of another small-diameter NW with sputtered Pt contacts defined by e-beam lithography (inset). The resistivity is times greater than a wire from the same batch with FIB-Pt.

Image of FIG. 3.
FIG. 3.

(Color online) (a) FIB patterned template before GaN growth. From left to right, FIB milled holes, Pt dots and lines. Depth of hole is , and thickness of dots and lines are . Separation between features is (scale bar: ). (b) The template in (a) after NW growth. NWs preferentially grew at the patterned Pt dots and lines, while milled holes did not nucleate NW growth (scale bar: ). (c) Individual GaN NWs grown at FIB-Pt dots (scale bar: ). Diameters of dots reduced to with same spacing. Inset shows a magnified image of spherical particle on the tip of grown NW. The diameters of NW and the particle are and , respectively.

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/content/aip/journal/apl/86/19/10.1063/1.1925775
2005-05-05
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Focused-ion-beam platinum nanopatterning for GaN nanowires: Ohmic contacts and patterned growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/19/10.1063/1.1925775
10.1063/1.1925775
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