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Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition
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10.1063/1.1926413
/content/aip/journal/apl/86/19/10.1063/1.1926413
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/19/10.1063/1.1926413

Figures

Image of FIG. 1.
FIG. 1.

Room-temperature PL from five-stack samples with 2, 4, 6, and 8 MLs of GaP SC layer.

Image of FIG. 2.
FIG. 2.

(Color online) AFM images showing the top layer of a three stack (a) without SC, and (b) with SC and a five stack (c) without SC, and (d) with SC.

Image of FIG. 3.
FIG. 3.

RTPL spectra comparing single to four-stack QD active regions (a) with SC and (b) without SC layers.

Image of FIG. 4.
FIG. 4.

characteristic and lasing spectra for a three-stack QD laser with 4 ML GaP SC layers.

Tables

Generic image for table
Table I.

Tabulated AFM data from samples in Fig. 2 including dot density, defect density, and dot size for a single layer, three-stack, and five-stack active region with and without GaP SC layers.

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/content/aip/journal/apl/86/19/10.1063/1.1926413
2005-05-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/19/10.1063/1.1926413
10.1063/1.1926413
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