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Sn concentration-depth profiles obtained by RBS for the as-implanted and annealed (900, 1000, and 1100 °C) samples.
Cross-sectional TEM images showing the Sn nanoclusters within the layer after annealing at 900 °C (a) and 1100 °C (b).
High-resolution TEM images of islands formed upon annealing at (a) and (b) 1000 °C and (c) and (d) 1100 °C. The insets in (a) and (c) present fast-Fourier-transform patterns from the island images.
Plan-view TEM micrograph, for the sample annealed at 1100 °C, (a) under structure factor imaging conditions along the  axis of the silicon substrate; (b) selected area diffraction (SAD) pattern from the plan-view observations; and (c) key diagram of the diffraction pattern.
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