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Combination of time of flight direct recoiled spectroscopy and ion scattering trajectory simulations of (Ga,Mn) growth by chemical beam epitaxy
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10.1063/1.1841478
/content/aip/journal/apl/86/2/10.1063/1.1841478
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1841478
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental surface periodicity scans for from GaN and (Ga,Mn) surfaces and schematic diagram of a Ga polar GaN surface structure showing the two domains and .

Image of FIG. 2.
FIG. 2.

SARIC simulations of azimuthal angle scans for from (0001) GaN and 2% Mn doped GaN surfaces when Mn atoms placed at Ga, , interstitial, and Ga, positions within the surface structure. Ion beam 5 keV , and .

Image of FIG. 3.
FIG. 3.

Experimental azimuthal angle -scans for nitrogen atoms recoiled from (0001) GaN and (Ga, Mn) surfaces. Ion beam 5 keV , , .

Image of FIG. 4.
FIG. 4.

SARIC simulations for nitrogen atoms recoiled from a (0001) GaN surface considering 0%, 30%, and 50% of vacancies within the surface structure. Ion beam 5 keV , , .

Image of FIG. 5.
FIG. 5.

SARIC simulations for nitrogen atoms recoiled from (0001) GaN and 2% Mn doped GaN surfaces when Mn atoms are placed at Ga, , interstitial and Ga, positions within the surface structure. Ion beam 5 keV , and .

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/content/aip/journal/apl/86/2/10.1063/1.1841478
2004-12-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Combination of time of flight direct recoiled spectroscopy and ion scattering trajectory simulations of (Ga,Mn)N growth by chemical beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1841478
10.1063/1.1841478
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