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Distribution of electrically active defects in chemical vapor deposition diamond: Model and measurement
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10.1063/1.1842856
/content/aip/journal/apl/86/2/10.1063/1.1842856
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1842856

Figures

Image of FIG. 1.
FIG. 1.

Detection spectra for positive and negative bias in the pumped state and in the as-grown state (inset).

Image of FIG. 2.
FIG. 2.

Experimental efficiency data for positive bias polarization. The solid lines are the best fits obtained with the extended Hecht model.

Image of FIG. 3.
FIG. 3.

Charge collection distances obtained with the homogeneous (solid lines) and with the extended (dashed lines) Hecht model.

Tables

Generic image for table
Table I.

Best fit parameters of the extended Hecht model.

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/content/aip/journal/apl/86/2/10.1063/1.1842856
2005-01-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Distribution of electrically active defects in chemical vapor deposition diamond: Model and measurement
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1842856
10.1063/1.1842856
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