1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions
Rent:
Rent this article for
USD
10.1063/1.1846152
/content/aip/journal/apl/86/2/10.1063/1.1846152
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1846152
/content/aip/journal/apl/86/2/10.1063/1.1846152
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/86/2/10.1063/1.1846152
2004-12-30
2014-10-30
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1846152
10.1063/1.1846152
SEARCH_EXPAND_ITEM