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Ballistic transport mode detected by picosecond time-of-flight measurements for nanocrystalline porous silicon layer
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10.1063/1.1848181
/content/aip/journal/apl/86/2/10.1063/1.1848181
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1848181
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Figures

Image of FIG. 1.
FIG. 1.

(a) Sample and experimental setup for measurement of photoemission from a self-supporting nc-PS layer. A cw laser (He–Cd: in wavelength) was used for excitation. (b) and (c) Stationary photocurrent and the photoemission current vs applied voltage at temperatures of 300 and .

Image of FIG. 2.
FIG. 2.

Experimental configuration for TOF measurements. An UV laser pulse ( in wavelength and in duration) was used for excitation. Transient photocurrent is observed with a digital oscilloscope.

Image of FIG. 3.
FIG. 3.

Transient photocurrent signals under various field strengths for a -thick self-supporting nc-PS layer at temperatures of (a) and (b).

Image of FIG. 4.
FIG. 4.

Estimated values of electron drift velocity in nc-PS as a function of electric field. The values in reported by Canali et al. (Ref. 15) are also shown for reference.

Image of FIG. 5.
FIG. 5.

Estimated values of electron mean free path in nc-PS as a function of electric field. The values in reported by Canali et al. (Ref. 15) are also shown for reference.

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/content/aip/journal/apl/86/2/10.1063/1.1848181
2004-12-30
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ballistic transport mode detected by picosecond time-of-flight measurements for nanocrystalline porous silicon layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1848181
10.1063/1.1848181
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