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Carrier transport and light-spot movement in carbon-nanotube infrared emitters
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10.1063/1.1848186
/content/aip/journal/apl/86/2/10.1063/1.1848186
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1848186
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Figures

Image of FIG. 1.
FIG. 1.

Solving the transport equation for a long-channel CNTFET at ambipolar regime. A quantum treatment is used to compute the currents through the Schottky barriers at the ends of the channel. A semiclassical drift-diffusion treatment is used to describe carrier transport in the long channel, along with a band-to-band recombination process to describe infrared emission.

Image of FIG. 2.
FIG. 2.

Band profile and charge density in a CNTFET with a channel length . (a) The conduction and valence bands vs the channel position at and . The solid lines are the self-consistent solution, and the dashed lines are the Laplace solution (which omits charge in the channel). (b) Hole density (with a peak value near the source) and electron density (with a peak value near the drain) vs the channel position for two bias conditions. The solid lines are for , , and the dashed lines are for , .

Image of FIG. 3.
FIG. 3.

(Color online) Hole current injected from the source (solid) and electron current injected from the drain (dashed) vs the normalized channel position for (i) , , , (ii) shorter channel with , , , and (iii) , , .

Image of FIG. 4.
FIG. 4.

(Color online) Radiative recombination rate (photon emission rate) vs channel position when and sweep. The source–drain current is kept constant at throughout the bias sweep. The numbers labeled near the peak of each curve are in units of volts.

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/content/aip/journal/apl/86/2/10.1063/1.1848186
2005-01-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier transport and light-spot movement in carbon-nanotube infrared emitters
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1848186
10.1063/1.1848186
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