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Solving the transport equation for a long-channel CNTFET at ambipolar regime. A quantum treatment is used to compute the currents through the Schottky barriers at the ends of the channel. A semiclassical drift-diffusion treatment is used to describe carrier transport in the long channel, along with a band-to-band recombination process to describe infrared emission.
Band profile and charge density in a CNTFET with a channel length . (a) The conduction and valence bands vs the channel position at and . The solid lines are the self-consistent solution, and the dashed lines are the Laplace solution (which omits charge in the channel). (b) Hole density (with a peak value near the source) and electron density (with a peak value near the drain) vs the channel position for two bias conditions. The solid lines are for , , and the dashed lines are for , .
(Color online) Hole current injected from the source (solid) and electron current injected from the drain (dashed) vs the normalized channel position for (i) , , , (ii) shorter channel with , , , and (iii) , , .
(Color online) Radiative recombination rate (photon emission rate) vs channel position when and sweep. The source–drain current is kept constant at throughout the bias sweep. The numbers labeled near the peak of each curve are in units of volts.
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