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Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates
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10.1063/1.1849836
/content/aip/journal/apl/86/2/10.1063/1.1849836
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849836
/content/aip/journal/apl/86/2/10.1063/1.1849836
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/content/aip/journal/apl/86/2/10.1063/1.1849836
2005-01-05
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849836
10.1063/1.1849836
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