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Atomistic processes during nanoindentation of amorphous silicon carbide
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10.1063/1.1849843
/content/aip/journal/apl/86/2/10.1063/1.1849843
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849843
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Load-displacement response for (a) and (b) 3C–SiC.

Image of FIG. 2.
FIG. 2.

Number of atoms in a 5 Å horizontal slice vs its depth.

Image of FIG. 3.
FIG. 3.

(Color) Top view of the local pressure distribution in (a) at and (b) 3C–SiC at .

Image of FIG. 4.
FIG. 4.

(Color) Top views of the indented surfaces: (a),(c) at and 5.75 Å; (b),(d) 3C–SiC at and 8.83 Å. Atoms are color coded by the displacement parameter .

Image of FIG. 5.
FIG. 5.

(a) Number of perturbed atoms as a function of distance from the center of indent for (dashed line) and 3C–SiC (solid line). (b) The fraction of the density of perturbed atoms in .

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/content/aip/journal/apl/86/2/10.1063/1.1849843
2005-01-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomistic processes during nanoindentation of amorphous silicon carbide
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849843
10.1063/1.1849843
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