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AlGaInP laser diodes incorporating a multiple quantum barrier
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10.1063/1.1849847
/content/aip/journal/apl/86/2/10.1063/1.1849847
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849847
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram detailing the multilayers within the MQB laser structure.

Image of FIG. 2.
FIG. 2.

Threshold current measurements, for the sample containing a MQB (crosses) and the control reference sample (squares), as a function of temperature.

Image of FIG. 3.
FIG. 3.

Drive current density minus radiative current density as a function of quasi-Fermi level separation for the MQB (crosses) and control device (squares) at 300 K.

Image of FIG. 4.
FIG. 4.

Drive current density minus radiative current density as a function of quasi-Fermi level separation for the MQB (crosses) and control device (squares) at 340 K (solid) and 360 K (dashed).

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/content/aip/journal/apl/86/2/10.1063/1.1849847
2004-12-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlGaInP laser diodes incorporating a 3λ∕4 multiple quantum barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849847
10.1063/1.1849847
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