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Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application
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10.1063/1.1849850
/content/aip/journal/apl/86/2/10.1063/1.1849850
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849850

Figures

Image of FIG. 1.
FIG. 1.

curves for the three Ni thicknesses (10, 20 and 30 nm) for 3 nm . Gradual shift in as a result of increasing Ni thickness can be noted.

Image of FIG. 2.
FIG. 2.

(a) vs EOT for the Ni∕Si samples. Good fit of the thicker Ni samples as against that for thinnest Ni sample can be noted. (b) Gains in EOT is maximum for the thinnest Ni∕Si sample.

Image of FIG. 3.
FIG. 3.

(a) Auger depth profiling, (b) HRTEM image, and (c) XRD data plot for 50 nm W∕20 nm Ni∕20 nm Si∕3 nm showing presence of nickel-rich silicon and nickel monosilicide after 400 °C forming gas anneal.

Image of FIG. 4.
FIG. 4.

(a) characteristics of the Ni∕Si stacks. Inset: Comparison with the theory of the 20 nm∕20 nm Ni∕Si stack for the thinnest dielectric. (b) Leakage current comparison for the Ni∕Si stacks at different temperatures for the thinnest dielectric. Low leakage indicates dielectric integrity is maintained at 700 °C.

Image of FIG. 5.
FIG. 5.

(a) Auger depth profiling and (b) HRTEM for 50 nm W∕20 nm Mo∕20 nm Si∕3 nm stack with region , region 2—unreacted moly, region , region 4—unreacted Si.

Tables

Generic image for table
Table I.

Work function values of the Ni∕Si stacks at different temperatures.

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/content/aip/journal/apl/86/2/10.1063/1.1849850
2005-01-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849850
10.1063/1.1849850
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