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Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures
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10.1063/1.1849853
/content/aip/journal/apl/86/2/10.1063/1.1849853
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849853
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Shubnikov–de Haas results at 1.5 K of the InAs quantum dots inserted in the GaAs barriers embedded between modulation doped /GaAs heterostructures with different modulation doping concentrations.; (a) S1, (b) S2, (c) S3, and (d) S4.

Image of FIG. 2.
FIG. 2.

Plan-view bright-field transmission electron microscopy image for [004] two-beam diffraction from InAs quantum dots inserted into GaAs barriers embedded between Si-doped /GaAs heterostructures with a doping concentration of .

Image of FIG. 3.
FIG. 3.

Plan-view bright-field transmission electron microscopy images of the [001] zone of the InAs quantum dots inserted in the GaAs barriers embedded between modulation doped /GaAs heterostructures with different modulation doping concentrations.; (a) S1, (b) S2, (c) S3, and (d) S4.

Image of FIG. 4.
FIG. 4.

Photoluminescence spectra measured at 26 K for InAs quantum dot arrays embedded into GaAs barriers with different modulation doping concentrations; (a) S1, (b) S2, (c) S3, and (d) S4.

Image of FIG. 5.
FIG. 5.

Photoluminescence spectra at 300 K for InAs quantum dot arrays embedded into GaAs barriers with different modulation doping concentrations; (a) S1, (b) S2, (c) S3, and (d) S4.

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/content/aip/journal/apl/86/2/10.1063/1.1849853
2005-01-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849853
10.1063/1.1849853
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