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Effect of annealing atmosphere on the structure and luminescence of Sn-implanted layers
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10.1063/1.1849855
/content/aip/journal/apl/86/2/10.1063/1.1849855
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849855
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) PL spectra of Sn-implanted layers after annealing in ambient and in vacuum at different temperatures. (b) Blue-violet PL peak intensity for the Sn-implanted layers annealed in ambient (open circle) and in vacuum (closed circle).

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM images showing the Sn nanoclusters within the layer after heat treatment in ambient at 600 °C (a), 700 °C (b), and 900 °C (c) and (d). The solid lines give the Sn distribution profile obtained by RBS. The inset of (d) displays a lattice image of a particle formed by a -Sn core and a shell.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM image showing the Sn nanoclusters within the layer after heat treatment at 900 °C in vacuum. The solid line gives the Sn distribution profile obtained by RBS.

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/content/aip/journal/apl/86/2/10.1063/1.1849855
2004-12-30
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO2 layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1849855
10.1063/1.1849855
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