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Hot-electron transport in 4H–SiC
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10.1063/1.1851001
/content/aip/journal/apl/86/2/10.1063/1.1851001
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1851001
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-field dependence at for 4H–SiC. Voltage pulse length is (circles) and (triangles, diamonds). Channel dimensions . For group A samples, square sheet resistance (triangles) and low-field electron mobility , and for group B samples (diamonds) and .

Image of FIG. 2.
FIG. 2.

Time-resolved dependence of the pulse shape of the current on the applied electric field: (a) (1) , (2) , (3) , (4) , (5) ; (b) (1) , (2) , (3) , (4) , (5) . Voltage pulse duration is , , , .

Image of FIG. 3.
FIG. 3.

Room temperature current-field measurement data taken at the peak position of the current pulse, (open triangles), and at the position prior to the distortion of the pulse, (closed triangles). Voltage pulse duration is , , , . Inset: the drop in the current on the electric field, , for two sample groups: (triangles) and (diamonds).

Image of FIG. 4.
FIG. 4.

Dependence of the conductance on lattice temperature at (diamonds) and (squares). Voltage pulse duration is , , . Inset: dependence of the conductance on lattice temperature at for two sample groups: (triangles) and (diamonds).

Image of FIG. 5.
FIG. 5.

Drift velocity as a function of electric field at for 4H–SiC. Voltage pulse duration is . For channel data see Fig. 1.

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/content/aip/journal/apl/86/2/10.1063/1.1851001
2005-01-05
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hot-electron transport in 4H–SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1851001
10.1063/1.1851001
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