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Observation of trapping defects in –silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination
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10.1063/1.1851592
/content/aip/journal/apl/86/2/10.1063/1.1851592
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1851592
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A representative narrow scan SDR spectrum of an -channel MOSFET. The axis is approximately parallel to the applied magnetic field. The microwave frequency is , which corresponds to a centerline .

Image of FIG. 2.
FIG. 2.

A wide scan SDR spectrum of an -channel MOSFET at high gain with significant signal averaging. The axis is approximately parallel to the applied magnetic field. The microwave frequency is , which corresponds to a centerline .

Image of FIG. 3.
FIG. 3.

(a) The vs magnetic field orientation with respect to the surface normal rotation about the integrated circuit side edge axis. This axis corresponds approximately to the axis and the surface normal is from the crystalline axis. (b) The vs magnetic field orientation with respect to the surface normal rotation about the integrated circuit side edge axis. This axis corresponds approximately to the axis. (c) The vs magnetic field orientation with respect to the edge axis of the integrated circuit for rotation around the surface normal. Note: the solid lines correspond to calculated values utilizing the correct crystalline orientation and and .

Image of FIG. 4.
FIG. 4.

(a) Current vs gate voltage and (b) SDR vs gate voltage of a MOSFET configured as a gate-controlled diode with the source/drain to substrate forward biased at .

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/content/aip/journal/apl/86/2/10.1063/1.1851592
2005-01-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1851592
10.1063/1.1851592
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