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Luminescence from stacking faults in gallium nitride
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10.1063/1.1852085
/content/aip/journal/apl/86/2/10.1063/1.1852085
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1852085
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

CL spectra of the -plane GaN epilayer taken at a temperature of 5 K. The 3.474 eV peak corresponds to the donor-bound exciton . The other peaks in this spectrum are associated with the presence of stacking faults.

Image of FIG. 2.
FIG. 2.

Plan-view TEM image and monochromatic CL images, taken at the same location on a TEM specimen of the -plane GaN epilayer. Corresponding regions are numbered for correlation of spatial location in the TEM and in the luminescence images.

Image of FIG. 4.
FIG. 4.

TEM images of stacking faults in the a-plane GaN epilayer: (a) zone axis lattice image of a single stacking fault ( type, with stacking sequence ABABCBCB). (b) Basal-plane stacking faults intersecting a prismatic -plane stacking fault.

Image of FIG. 3.
FIG. 3.

Enlarged TEM and CL images from a small region in Fig. 2, showing correlation between partial dislocations and -plane stacking faults, with luminescence at 3.29 and 3.33 eV, respectively.

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/content/aip/journal/apl/86/2/10.1063/1.1852085
2005-01-04
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Luminescence from stacking faults in gallium nitride
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1852085
10.1063/1.1852085
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