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CL spectra of the -plane GaN epilayer taken at a temperature of 5 K. The 3.474 eV peak corresponds to the donor-bound exciton . The other peaks in this spectrum are associated with the presence of stacking faults.
Plan-view TEM image and monochromatic CL images, taken at the same location on a TEM specimen of the -plane GaN epilayer. Corresponding regions are numbered for correlation of spatial location in the TEM and in the luminescence images.
TEM images of stacking faults in the a-plane GaN epilayer: (a) zone axis lattice image of a single stacking fault ( type, with stacking sequence ABABCBCB). (b) Basal-plane stacking faults intersecting a prismatic -plane stacking fault.
Enlarged TEM and CL images from a small region in Fig. 2, showing correlation between partial dislocations and -plane stacking faults, with luminescence at 3.29 and 3.33 eV, respectively.
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