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Interfacial reactions during GaN and AiN epitaxy on 4H– and 6H–SiC(0001)
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10.1063/1.1852703
/content/aip/journal/apl/86/2/10.1063/1.1852703
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1852703
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) XPS spectra of the Si  photoelectron peak recorded for GaN/4H–SiC, GaN/6H– and AlN/4H–SiC, AlN/6H– samples grown on 4H–, and 6H–SiC surfaces in situ cleaned by Ga flash-off with different Ga ML.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Real time data at 4.7 eV recorded during exposure of the GaN/4H–, GaN/6H–, AlN/4H–, and AlN/6H– to atomic nitrogen plasma at the same growth temperature of the GaN and AlN thin layers. (b) SE spectra of the real, , and imaginary, , parts of the pseudodielectric function of GaN and AlN layers grown on both 4H–SiC and 6H–SiC before and after further exposure to atomic nitrogen.

Image of FIG. 3.
FIG. 3.

Thickness of the chemical interface (including Si–N, Si–O, Si–Si) as determined by spectroscopic ellipsometry for the GaN/4H–SiC, GaN/6H–SiC, AlN/4H–SiC, and AlN/6H–SiC. The 95% confidence limit on thickness is ±3 Å.

Image of FIG. 4.
FIG. 4.

(a) High resolution TEM image of GaN grown on 4H–SiC. Note formation of cubic phase close to the interface followed by wurtzite GaN. (b) Volume fraction of the GaN cubic phase found in the structural interface layer as derived from the analysis of the ellipsometric spectra recorded for GaN layers grown on both 4H–SiC and 6H–SiC. The structural interface layer has been modeled with a BEMA mixture of -GaN, -GaN, and voids. Voids represent defects at the initial growth stage.

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/content/aip/journal/apl/86/2/10.1063/1.1852703
2005-01-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial reactions during GaN and AiN epitaxy on 4H– and 6H–SiC(0001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1852703
10.1063/1.1852703
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