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Nanoindentation and photoreflectance study on polycrystalline ternary Al–C–N thin films
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10.1063/1.1853507
/content/aip/journal/apl/86/2/10.1063/1.1853507
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1853507
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High-resolution TEM micrograph of the sample . Inset is the selected-area electron diffraction pattern, which can be easily indexed for a hexagonal close-packed structure, assuming that the primary electron beam impinged along the direction is slightly tilted toward direction. Extrinsic stacking fault, denoted here as “,” and edge dislocations are evidently identifiable with the aid of fast Fourier transform processing.

Image of FIG. 2.
FIG. 2.

XRD pattern for the aluminum carbonitride thin films on Si substrate. For the deposits, only the reflection is observed.

Image of FIG. 3.
FIG. 3.

Berkovich hardness and Young’s modulus for the deposits.

Image of FIG. 4.
FIG. 4.

Photoreflectance spectra measured up to a photon energy of . Inset shows the differentiated spectrum for the sample .

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/content/aip/journal/apl/86/2/10.1063/1.1853507
2005-01-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoindentation and photoreflectance study on polycrystalline ternary Al–C–N thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/2/10.1063/1.1853507
10.1063/1.1853507
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