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High-resolution TEM micrograph of the sample . Inset is the selected-area electron diffraction pattern, which can be easily indexed for a hexagonal close-packed structure, assuming that the primary electron beam impinged along the direction is slightly tilted toward direction. Extrinsic stacking fault, denoted here as “,” and edge dislocations are evidently identifiable with the aid of fast Fourier transform processing.
XRD pattern for the aluminum carbonitride thin films on Si substrate. For the deposits, only the reflection is observed.
Berkovich hardness and Young’s modulus for the deposits.
Photoreflectance spectra measured up to a photon energy of . Inset shows the differentiated spectrum for the sample .
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