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Controlled shallow single-ion implantation in silicon using an active substrate for sub- ions
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10.1063/1.1925320
/content/aip/journal/apl/86/20/10.1063/1.1925320
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/20/10.1063/1.1925320
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic (not to scale) of the single-ion detection system integrated into the high-purity Si substrate. The surface detector electrodes are shown connected to the -wells on each side of the thin oxide region which has a width of . Ions reach the substrate through the apertures in the mask between the two vertical dashed lines, and a two-aperture mask is shown. We also report data from unmasked and 400-aperture masked devices (see Fig. 3). A transient in the external circuit from a single-ion impact is shown to the right.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Optical, (b) SEM, and (c) IBIC (with He ions) images of the active region of the device. The dashed rectangles in (b) and (c) show the same region of the device. The He ions penetrate the surface mask and map the charge collection efficiency, according to the false color scale, of the entire device.

Image of FIG. 3.
FIG. 3.

(a) Verification of the function of the single-ion detection system prior to ion implantation by irradiation with x rays. (b) Pulse height spectrum of ion impacts in an unmasked detector. The inset shows the shift in the peak centroid with fluence due to damage in the implant site. (c) Pulse height spectrum of ion impacts for a detector masked with 400 apertures, each in diameter. The inset shows two transients from ion impacts in a detector masked with two apertures, each in diameter (horizontal axis is time with major division of ).

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/content/aip/journal/apl/86/20/10.1063/1.1925320
2005-05-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/20/10.1063/1.1925320
10.1063/1.1925320
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