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Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes
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10.1063/1.1927695
/content/aip/journal/apl/86/20/10.1063/1.1927695
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/20/10.1063/1.1927695

Figures

Image of FIG. 1.
FIG. 1.

characteristics of TO-66 packaged 280 nm LED with and without finned heat-sink under dc (closed symbols) and pulse (open symbols) pumping. (Inset) Schematic view of the UV LED layer structure.

Image of FIG. 2.
FIG. 2.

Peak emission energy shift with applied power for packaged TO-66 type LED with and without finned heat sink.

Image of FIG. 3.
FIG. 3.

(Color online). Temperature distribution in the packaged LED heat sink assembly at dc bias of 40 mA.

Tables

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Table I.

Layer-by-layer comparison of the calculated thermal impedance.

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/content/aip/journal/apl/86/20/10.1063/1.1927695
2005-05-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/20/10.1063/1.1927695
10.1063/1.1927695
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