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Analysis of thermal images from diode lasers: Temperature profiling and reliability screening
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10.1063/1.1928319
/content/aip/journal/apl/86/20/10.1063/1.1928319
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/20/10.1063/1.1928319
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Front side thermographic images of Device A. The device is measured without operation current at a heat sink temperature of (a) 25 and (b) 40 °C. Images (c) and (d) present data obtained at a heat sink temperature of 25 °C and . Image (d) is measured with respect to a reference image monitored at a heat sink temperature of 37 °C and . The data are recalibrated with respect to the absolute temperature. From (d), we extract thermal profiles horizontally and perpendicularly through the active region; see (e) and (f), respectively. The data (open circles) are compared to the result of FEM (lines).

Image of FIG. 2.
FIG. 2.

Front side thermographic images of (a) Device B, and (c) and (e) from Device C. The corresponding lateral profiles (b), (d), and (f) are taken at the positions of the defects. For taking image (e), the focal point of the camera is shifted into the laser cavity by . The heat sink temperature is 25 °C and .

Image of FIG. 3.
FIG. 3.

Top view thermographic profiles of (a) Devices D (open circles) and E (full squares) detected through stripe windows within the contacts. (b) Electroluminescence pattern from Device E are detected through stripe windows. In (c), the thermal profiles for Devices D (open circles) and E (full squares) taken above the active region are shown. The heat sink temperature is 25 °C and .

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/content/aip/journal/apl/86/20/10.1063/1.1928319
2005-05-12
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of thermal images from diode lasers: Temperature profiling and reliability screening
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/20/10.1063/1.1928319
10.1063/1.1928319
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