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Miniaturizable Si-based electro-optical modulator working at 1.5 μm
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10.1063/1.1928324
/content/aip/journal/apl/86/20/10.1063/1.1928324
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/20/10.1063/1.1928324
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

BMFET schematic cross section and principle of operation as light intensity modulator. (a) On state: The plasma fills the device optical channel and the light is absorbed. (b) Off state: The light is transmitted.

Image of FIG. 2.
FIG. 2.

Modulation depth vs drain-source voltage in common source configuration and constant gate current of 5 mA (filled squares) and 10 mA (●): exceeds the threshold of 25% (indicated by an horizontal dashed line) for positive or negative drain bias of 10 V and reaches the saturation level (100%) at about 25 V drain voltage (positive or negative).

Image of FIG. 3.
FIG. 3.

Electro-optical dynamic performances in common source configuration, gate current of 5 mA, and a 100 kHz wave voltage, between +4 V and +28 V, applied to the drain terminal. Solid line: Optical power (left hand scale); dots: (right-hand scale). The modulation depth is of about 65%.

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/content/aip/journal/apl/86/20/10.1063/1.1928324
2005-05-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Miniaturizable Si-based electro-optical modulator working at 1.5 μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/20/10.1063/1.1928324
10.1063/1.1928324
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