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(a) Thickness dependent conductivity of Pd films deposited on BG (◯) and on SCG (◻). The inset shows a schematic of an ultrathin Pd film consisting of nanoclusters on a SAM coated substrate; (b) and (c) are AFM images of nominal 3.3 nm thick Pd films on BG and SCG, respectively.
(a) Conductance response of a 3.3 nm thick Pd film on SCG to . The flow of is controlled by a solenoid valve with a switching time of 25 ms; (b) repeated cycling of loading and unloading onto the same sample; (c) response of a 3.3 nm thick Pd film on BG to .
(a) Conductance responses of a 3.3 nm thick Pd film on SCG to various concentrations of . Data were acquired for each concentration and collected to be drawn in the same plot, (b) conductance change vs concentration for the same sample (—∎—). The inset is a magnified view of the data in the low concentration region. Data obtained for a continuous Pd film (10 nm thick) on SCG is also given (…●…) for comparison.
In situ AFM image of a 3.3 nm thick Pd film on SCG acquired (a) before and (b) during exposure to gas. Several hydrogen-induced gap narrowings or closings are highlighted within the white circles. The corresponding schematics in the lower panels illustrate the formation of increased conducting pathways due to HILE in Pd nanoclusters.
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