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(a) Calculated gain spectra for and carrier densities of ; (b) calculated gain spectra for and carrier densities of . The grey dots are from experiment for injection currents of (a) 159, 180, 201, 221, and and (b) 70, 80, 92, and . The inhomogeneous broadening is for GaInNAs and for InGaAs.
Calculated peak material gain vs carrier density for (dashed) with an inhomogeneous broadening of , with an inhomogeneous broadening of (solid) and for predominantly homogeneous broadening for sample (dotted) and (dash–dotted). The squares are experimental values. We observe excellent agreement between theory and experiment. Inclusion of nitrogen lowers the slope of the curve, i.e., the differential gain. The inset shows the conversion of experimental injection currents to for GaInNAs (solid) and InGaAs (dashed) samples as obtained from Fig. 1.
LWEF for (a) and (b) determined experimentally (grey squares) and theoretically (lines). The arrow indicates the position of the corresponding peak gain for injection currents of 201 and for the GaInNAs (a) and for the InGaAs sample (b) for injection currents of 80 and .
LWEF at peak gain vs peak material gain for (dashed) with an inhomogeneous broadening of , with an inhomogeneous broadening of (solid) and for predominantly homogeneous broadening for sample (dotted) and (dash–dotted). The crosses indicate the average values and error bars of the experimental gain peak alpha factor for (solid) and (dashed).
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