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Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on
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10.1063/1.1931027
/content/aip/journal/apl/86/21/10.1063/1.1931027
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/21/10.1063/1.1931027
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Left) equilibrium geometries and (right) total charge density plots of the adsorbed CNT on the trench of for different H concentrations: (a), (b) ; (c), (d) ; (e), (f) . The charge densities are depicted on a plane passes through the Si dimers. The numbers represent distances in angstroms.

Image of FIG. 2.
FIG. 2.

(Left) electronic band structures plus density of states (DOS) and (right) charge density plots for the states just above the Fermi level for the adsorbed CNT on the trench of H/Si(001) for different H concentrations: (a), (b) ; (c), (d) ; (e), (f) . The is the direction of the wave vector parallel (perpendicular) to the CNT axis. The DOS is plotted along direction. The zero of energy is taken as the Fermi level, indicated by dashed lines.

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/content/aip/journal/apl/86/21/10.1063/1.1931027
2005-05-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H∕Si(001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/21/10.1063/1.1931027
10.1063/1.1931027
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