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AlGaN films grown on (0001) sapphire by a two-step method
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10.1063/1.1931058
/content/aip/journal/apl/86/21/10.1063/1.1931058
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/21/10.1063/1.1931058
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Two sets of in situ monitored reflectance are shown in this figure. The upper curve is for the LT-GaN-buffer sample and the lower curve is for the LT-AlN-buffer sample. (b) SEM images of the LT-GaN-buffer sample at different growth stages as marked as A, B, C, and D in (a).

Image of FIG. 2.
FIG. 2.

PL signals for the LT-GaN-buffer and LT-AlN-buffer samples. The curves marked as B, C, and D correspond to the different growth stages of LT-GaN-buffer sample as indicated by Fig. 1(a), while the one marked as D-back side is the PL signal obtained from the back side of Sample D.

Image of FIG. 3.
FIG. 3.

TEM image of the initial growth stage of the LT-GaN-buffer sample. Insets show the EDX spectra obtained from the corresponding Arabic numerals marked in the TEM image.

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/content/aip/journal/apl/86/21/10.1063/1.1931058
2005-05-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlGaN films grown on (0001) sapphire by a two-step method
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/21/10.1063/1.1931058
10.1063/1.1931058
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