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Current-conduction and charge trapping properties due to bulk nitrogen in gate dielectric of metal-oxide-semiconductor devices
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10.1063/1.1935768
/content/aip/journal/apl/86/21/10.1063/1.1935768
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/21/10.1063/1.1935768
/content/aip/journal/apl/86/21/10.1063/1.1935768
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/content/aip/journal/apl/86/21/10.1063/1.1935768
2005-05-17
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/21/10.1063/1.1935768
10.1063/1.1935768
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