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Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN
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10.1063/1.1938004
/content/aip/journal/apl/86/21/10.1063/1.1938004
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/21/10.1063/1.1938004
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current–voltage characteristics of the MSM LT GaN photodetectors with ohmic and Schottky contacts, with active area of and with finger width and spacing of 1 and , respectively.

Image of FIG. 2.
FIG. 2.

Time-resolved photoresponse waveform for the MSM LT GaN photodetectors with ohmic contacts (active area: , finger width and spacing: 1 and ), measured at bias and input power.

Image of FIG. 3.
FIG. 3.

Photoresponse amplitude of the MSM LT GaN photodetector as a function of bias voltage and optical input power.

Image of FIG. 4.
FIG. 4.

FWHM of electrical transients of the LT GaN photodetector as a function of bias voltage and input power.

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/content/aip/journal/apl/86/21/10.1063/1.1938004
2005-05-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/21/10.1063/1.1938004
10.1063/1.1938004
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