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GaNAsSb photodetector on GaAs
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10.1063/1.1940722
/content/aip/journal/apl/86/21/10.1063/1.1940722
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/21/10.1063/1.1940722
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Figures

Image of FIG. 1.
FIG. 1.

Room-temperature photoluminescence (PL) spectra of sample as-deposited and sample after rapid thermal annealing (750 °C for 5 min in flowing with GaAs proximity capping). The spectra were obtained in an Accent RPM2000 mapping system using 532-nm illumination with a grating monochromator and an InGaAs detector.

Image of FIG. 2.
FIG. 2.

Dark current-voltage characteristics of as-deposited and annealed samples at room temperature. The annealed sample has nearly an order of magnitude reduction of leakage current. The rapid increase of reverse current for reverse bias voltage above 6 V is due to the starting of diode breakdown.

Image of FIG. 3.
FIG. 3.

(a) Responsivity vs reverse bias voltage characteristics at 1468 nm of as-deposited and annealed samples. (b) The corrected photocurrent spectra of the as-deposited and annealed samples. The as-deposited device had a higher photocurrent at a wavelength longer than .

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/content/aip/journal/apl/86/21/10.1063/1.1940722
2005-05-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 1.55μm GaNAsSb photodetector on GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/21/10.1063/1.1940722
10.1063/1.1940722
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