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Room-temperature photoluminescence (PL) spectra of sample as-deposited and sample after rapid thermal annealing (750 °C for 5 min in flowing with GaAs proximity capping). The spectra were obtained in an Accent RPM2000 mapping system using 532-nm illumination with a grating monochromator and an InGaAs detector.
Dark current-voltage characteristics of as-deposited and annealed samples at room temperature. The annealed sample has nearly an order of magnitude reduction of leakage current. The rapid increase of reverse current for reverse bias voltage above 6 V is due to the starting of diode breakdown.
(a) Responsivity vs reverse bias voltage characteristics at 1468 nm of as-deposited and annealed samples. (b) The corrected photocurrent spectra of the as-deposited and annealed samples. The as-deposited device had a higher photocurrent at a wavelength longer than .
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