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Nanoporous alumina as a dielectric for microcavity plasma devices: Multilayer Al/ structures
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View: Figures


Image of FIG. 1.
FIG. 1.

Scanning electron micrograph (SEM) of a thick film/Al interface in cross section, in which several regions are magnified to illustrate details of film structure.

Image of FIG. 2.
FIG. 2.

Voltage-current characteristics for a array of /Al microdischarge devices in which the film thickness on the interior of the cylindrical microcavities is . All of the data are for Ne at 700 Torr and results are shown for sinusoidal ac excitation frequencies of 5, 10, 15, and 20 kHz. The dashed horizontal line indicates the approximate value of the ignition voltage, and the inset qualitatively illustrates the device structure (not drawn to scale).

Image of FIG. 3.
FIG. 3.

Data similar to those of Fig. 2 for a array but for the sinusoidal ac frequency fixed at 20 kHz. Measurements are shown for four values of the Ne pressure.

Image of FIG. 4.
FIG. 4.

(Color) Optical micrographs of small arrays of (left) and (right) dia. /Al multilayer devices. The dark ring visible within each microcavity is the film protecting the interior of the device. At center is a photograph of a single /Al microcavity, illuminated only from above.

Image of FIG. 5.
FIG. 5.

(Color) Photographs of a array of dia. /Al devices operating in different gases: (Top) 700 Torr Ne (rms voltage and current of 239 V and 1.9 mA, respectively); (Bottom) 500 Torr of an Ar/3% mixture (rms voltage and current of 442 V and 80 mA, respectively). The sinusoidal ac excitation frequency was fixed at 15 kHz.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoporous alumina as a dielectric for microcavity plasma devices: Multilayer Al/Al2O3 structures